power mosfets 1 publication date: march 2004 sjg00036aed 2SK3723 n-channel enhancement mode mosfet features ? low on-resistance, low q g ? high avalanche resistance applications ? for pdp ? for high-speed switching absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm parameter symbol rating unit drain-source surrender voltage v dss 150 v gate-source surrender voltage v gss 30 v drain current i d 30 a peak drain current i dp 120 a power dissipation p d 50 w t a = 25 c3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 0 to 0.5 123 (8.9) (10.2) 0 to 0.3 (2.1) (6.4) (1.4) 10.5 0.3 4.6 0.2 1.4 0.1 0.8 0.1 2.5 0.2 1.4 0.1 2.54 0.3 10.1 0.3 3.0 0.5 (1.4) 1.5 0.3 0.6 0.1 1: gate 2: drain 3: source to-220c-g1 package internal connection marking symbol: k3723 g d s parameter symbol conditions min typ max unit drain-source surrender voltage v dss i d = 1 ma, v gs = 0 150 v gate threshold voltage v th v ds = 25 v, i d = 1 ma 2 4 v drain-source cutoff current i dss v ds = 120 v, v gs = 0 100 a gate-source cutoff current i gss v gs = 30 v, v ds = 0 1 a drain-source on resistance r ds(on) v gs = 10 v, i d = 15 a 33 42 m ? forward transfer admittance ? y fs ? v ds = 25 v, i d = 15 a 8 18 s short-circuit forward transfer capacitance c iss v ds = 25 v, v gs = 0, f = 1 mhz 2 900 pf (common-source) short-circuit output capacitance c oss 618 pf (common-source) reverse transfer capacitance c rss 91 pf (common-source) turn-on delay time t d(on) v dd 100 v, i d = 15 a 32 ns rise time t r r l = 6.7 ? , v gs = 10 v 46 ns turn-off delay time t d(off) 227 ns fall time t f 66 ns
2SK3723 2 sjg00036aed safe operation area p c ? t a drain current i d ( a ) drain-source voltage v ds ( v ) 10 ? 1 10 1 100 1 000 1 10 100 1 000 i dp i d t = 100 s t = 1 ms t = 10 ms non repetitive pulse t c = 25 c 100 50 0 050 25 100 75 125 150 ambient temperature t a ( c ) collector power dissipation p c ( w ) (1) (2) (1) t c = t a (2) without heat sink parameter symbol conditions min typ max unit diode foward voltage v dsf i dr = 30 a, v gs = 0 ? 1.5 v reverse recovery time t rr l = 230 h, v dd = 100 v 130 ns reverse recovery charge q rr i dr = 15 a, di/dt = 100 a/ s 533 nc gate charge load q g v dd = 100 v, i d = 15 a 55.4 nc gate-source charge q gs v gs = 10 v 9.1 nc gate-drain charge q gd 22.4 nc thermal resistance (ch-c) r th(ch-c) 2.5 c/w thermal resistance (ch-a) r th(ch-a) 89.2 c/w electrical characteristics (continued) t c = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
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